Model-based read-reference-voltage compensation for cross-temperature reliability in 3D TLC NAND flash memory
Cheng Luo, Qianqi Zhao, Minghui Dong, Yicheng Ke, Wangyong Chen, Ying Yang, Qi Wang, Zongliang Huo · IEICE Electronics Express · 2026
AI and edge-computing applications drive NAND Flash storage toward higher capacity and performance, but cross-temperature operation shifts threshold-voltage distributions (TVD) and degrades reliability and read performance. We construct a chip-level cross-temperature TVD shift model with on-chip temperature compensation circuit disabled and short-term retention loss suppressed. Based on this model, a read-reference-voltage compensation method, MB-RRVC, predicts read-voltage offsets from cross-temperature amplitude, program/erase (P/E) cycles, states, and layer positions. Experiments show that the method significantly reduces raw bit error rate (RBER) from 24.28% to 0.44% under extreme cross-temperature conditions, and SSDsim evaluation confirms a 43.81% reduction in average read response time.