Optically Controlled MoS 2 Phase Conversion Memory-Based In-Sensor Computing Enables Higher Information Security
Jinchengyan Wang, Chaoyi Zhu, Bochang Zhang, Yuexiao Wang, Yu Xu, Xuesen Xie, Changsong Gao, Bai Tao Sun, Jinshun Bi, Guangdong Zhou · ACS Photonics · 2025
Data security has been playing an increasingly crucial role in diverse fields, such as industry, commerce, agriculture, and military defense. Conventional encryption technology involves complex circuits and designs of the algorithm. We propose a hybrid architecture enabled by two-terminal MoS 2 optoelectronic memory for image encryption, yielding a successful attack rate (SAR) of 0.0% and a system link indicator D ↔ sys = 0.32. This merit is attributed to the light-dosage-induced phase change generation (H y MoS x ) in MoS 2 optoelectronic memory. Through precise control of the concentration of the H y MoS x ratio, the two-terminal optoelectronic memory can provide 128 short-term states and 256 long-term states to execute reservoir encoding and pixel compression, efficiently reducing the postencryption data stream and increasing data safety. This route provides a significant advantage in security, efficiency, and adaptability for data encryption in future information security.