A Low-Error-Tolerance Coding Strategy for TLC NAND Flash Memory
Chin-Hsien Wu, Yan-Qi Liao, Yung-Cheng Huang · 2024
Nowadays, TLC NAND flash memory has become the mainstream storage medium because of its high capacity and low cost. However, when data is stored in TLC NAND flash memory for a long time, TLC NAND flash memory may cause a lot of retention errors due to its charge leakage. In the paper, we will propose a low-error-tolerance coding strategy to reduce the impact of charge leakage and thereby reduce the retention errors when compared to the previous methods.