Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
Seongkweon Kang, Jaerok Kim, Sang‐Min Lee, Sang‐Min Lee, Sungpyo Baek, Saeroonter Oh, Sungjoo Lee, Sungjoo Lee, Sungjoo Lee · Advanced Functional Materials · 2025
Abstract Most physical reservoir computing (RC) systems require complex preprocessing steps such as binarization under noise‐free conditions and challenging real‐time data processing because of latency and increase system complexity. This paper proposes a noise‐resistant RC system that reduces the necessity for preprocessing by utilizing a steep‐switching memory FET. The proposed device achieved steep‐switching characteristics (SS PGM = 19 mV dec −1 , SS ERS = 23 mV dec −1 ) by operating in a stable state for a negative capacitance, which is established through the gate‐stack of a ferroelectric insulator (CuInP 2 S 6 ) and an insulator (h‐BN). Additionally, it shows wide hysteresis (4.72 V) through dipole coupling between CuInP 2 S 6 and ferroelectric semiconductor (α‐In 2 Se 3 ). Sub‐60 mV dec −1 characteristics reduce the probability of undefined reservoir state occurrences and demonstrate the ability to filter noisy signals without additional preprocessing. Furthermore, its wide hysteresis‐based memory enables non‐linear transformations that incorporate temporal information from input signals, facilitating complex tasks such as temporal signal classification. A noise‐resistant RC system is developed using steep‐switching memory FET and validate its performance using noisy MNIST (15 dB: 95.9%, noise‐free: 96.3%) and speech recognition (15 dB: 86.0%, noise‐free: 86.7%) tasks, satisfying international noise‐tolerance standards. This study highlights the potential of enhancing real‐time data processing and system operating efficiency for data‐centric computing systems.