Evaluation and Modeling of Low Value Comb Resistors
Peter J. Zampardi, Quinn Davenport, Leonard A. Hayden · IEEE Transactions on Semiconductor Manufacturing · 2025
In power amplifier design, designers often use low value resistors where there are one or more ballast transistors per PA cell. Constant pressure to reduce die size means we would like the most compact solution as possible. In this work, we demonstrate low value “comb” or “interdigitated” resistors and present a simple model for them. A key feature of the model was finding the resistive contribution of the chamfered corners. These resistors also show significant improvement in variation compared to semiconductor resistors normally used in design.