Demonstration of Embedded MRAM with Sub-50 nm MTJ for RAM-Like and MCU Applications
Yuan-Jen Lee, Chun-Tai Cheng, Jiancheng Huang, Kuo-Feng Huang, Bo-Hung Lin, Brian Lin, K.C. Tseng, Butsurin Jinnai, Ming‐Han Tsai, Meng-Ru Jiang, Yi Ching Ong, Yu-Sheng Chen, Chun-Yang Tsai, Kevin Huang, C.C. Liu, Ming-Lun Lee, Ku-Feng Lin, Yi-Chun Shih, Perng-Fei Yuh, Tien-Wei Chiang · 2025
We present the scalability of the MTJ critical dimension (CD) to sub-50 nm on test vehicles at the 16 nm technology node. Using fast-write MTJ films, we demonstrate a high endurance of lE14 cycles with a high-speed 20 ns write pulse width and a sub-ppm bit error rate without ECC for RAM-like applications. With high data retention MTJ films, we achieve 20-year data retention above 150°C and lE6 cycles endurance for MCU applications. This MTJ CD scaling is designed to be compatible with small bitcell, making it suitable for the 5 nm technology node.