A High SFDR Wide-Bandwidth Third-Order Low-Pass Elliptic Filter in 180 nm CMOS Technology
Gaurav Srivastava, Darshak Bhatt · IEEE Microwave and Wireless Technology Letters · 2025
This article introduces a third-order low-pass elliptic filter implemented with a novel self-biased differential active inductor-based topology. The proposed third-order elliptic LPF is tunable over a center frequency of 0.5–1.5 GHz, which is achieved by varying$V_{\text {DD}}$of the proposed active inductor, while the fine tuning (to achieve maximum passband to stopband attenuation for a center frequency) is attained by varying the cross-coupled feedback resistance$R_{B}$. The filter achieves passband-to-stopband attenuation of approximately −40 dB with aQ(quality factor) of 80 and a −3-dB bandwidth of 0.2 GHz and a total power consumption of 6.92 mW. The proposed filter occupies a minimum on-chip area of$0.048~\text {mm}^{2}$with spurious -free dynamic range (SFDR) of 80.133 dB and the best figure of merit (FOM)$2.30\times 10^{-3}$fJ when compared with other state-of-the-art implemented architectures.