Circuit Polymorphism Enabled by RFET Devices Processed on Industrial FDSOI
Niladri Bhattacharjee, Giulio Galderisi, Yuxuan He, V. Sessi, Maximilian Drescher, Viktor Havel, M. Zier, Maik Simon, K. Ruttloff, Kuiliang Li, Annekathrin Zeun, A.-S. Seidel, C. Metze, M. Grothe, Sören Jansen, M. Wijvliet, Shubham Rai, Akash S. Kumar, Stefan Slesazeck, Jan Hoentschel · 2025
We present three-independent-gate Reconfigurable Field Effect Transistors, processed on a 300 mm industrial platform. The devices, able to function as both n-type and p-type transistors, were built on a GlobalFoundries fully-depleted silicon-on-insulator technology, and show highest symmetry between the on-state currents of both polarity modes, as well as a clearly defined multi-VTbehavior. Based on them, we show electrical transient measurements demonstrating the functionality of a highly reconfigurable logic gate, the RGATE, able to yield up to eight different logic functions using only four transistors. Furthermore, we developed a Verilog-A table model of the presented transistors, that we used to build a 2-bit adder/2-bit half subtract reconfigurable circuit demonstrating the functionality of a highly tiled, security-oriented architecture employing only RGATEs.