Optoelectronic Reservoir Computing Based on 2D P‐Type Nb‐Doped MoS2 Field‐Effect Transistor
Yitong Chen, Rui Wang, Dingwei Li, Qi Huang, Yingjie Tang, Huihui Ren, Yan Wang, Guolei Liu, Fanfan Li, Hong Wang, Bowen Zhu · Small · 2025
Abstract Molybdenum disulfide (MoS2) has drawn extensive interest due to its excellent performance as a 2D n‐type semiconductor. However, achieving high‐performance devices based on p‐type MoS2, which is crucial for complementary field effect transistors (CFETs) and neuromorphic computing applications, remains limited. Here, an optoelectronic reservoir computing (RC) based on a p‐type Nb‐doped MoS2 device is reported. The device shows p‐type transistor characteristics with a high on/off current ratio exceeding 106, low subthreshold swing (SS) of 234 mV dec−1, notable on‐state current of 12 µA µm−1, along with robust cyclic performance and ambient stability. Importantly, the optically tunable facilitated and depressed conductance arises from Nb‐vacancy defect states, confirmed by Kelvin probe force microscopy measurement. Furthermore, the device enables 100% motion recognition across eight directions and functions as a reservoir to map feature information from various sequential optical inputs, exhibiting computing capability in pattern recognition with an accuracy of 88%.