Electrical Tunability in 3-Gated Reconfigurable Transistor for Analog/RF Applications
Chinmayi Adoni, Sandeep Semwal, Manish Gupta, Jean‐Pierre Raskin, Abhinav Kranti · IEEE Journal of the Electron Devices Society · 2025
The potential of electrical tunability in a 3-gated (3G) Reconfigurable Field Effect Transistor (RFET) for analog/RF applications is investigated through four distinct configurations (R2-IG-LVT, R1-IG-Ambi, R3-IG-LVT, and R2-IG-HVT). The electrical connections through two program gates (PG) and one control gate (CG) in 3G-RFET supports the implementation of configurations suitable for low-VTH (R2-IG-LVT and R3-IG-LVT) and high-VTH (R2-IGHVT), phase follower/reversal (R2-IG-LVT), frequency doubler (R1-IGAmbi), high gain (R3-IG-LVT), lower parasitic capacitance (R2-IG-LVT and R3-IG-LVT), and higher linearity (R3-IG-LVT) applications. Results showcase electrical tunability as an opportunity to realize many analog/RF features–in–one nanoscale 3G-RFET.