A Comprehensive Review on HEMT Devices and Their Technological Foundations
Lokeshwar Patel, Subodh Dewangan · International Journal of Science Architecture Technology and Environment · 2025
This research article provides an in-depth examination of the operational principles, structural intricacies, material innovations, and electrical behavior of High Electron Mobility Transistors (HEMTs). Emphasizing their essential role in high-frequency and power electronics, this review explores the underlying physics of heterostructure formation, analyzes advanced material systems such as InP and GaN, and introduces the velocity-electric field (V–E) characteristics as a crucial performance metric. The inclusion of novel materials and fabrication strategies has propelled HEMTs into diverse application domains, from RF amplifiers to satellite communication systems. This study aims to serve as a foundational reference for researchers and engineers working in advanced electronic device design.