Development of More Robust and Stable Logic Gates Using Novel Parameter Values for SiDB
Emanuel V.C. Ruella, Ricardo Ferreira, Omar P. Vilela Neto, José Augusto M. Nacif · 2025
As CMOS technology approaches its physical limits, there is a growing need to explore alternatives beyond CMOS, such as Silicon Dangling Bonds (SiDBs). SiDBs, utilizing Coulombic interactions, offer the potential for ultra-low energy consumption and high integration density. Recent research has introduced new parameter values for SiDB technology, specifically the Thomas-Fermi Screening Length$(\lambda_{Tp=}1.80nm)$and relative permittivity$(\epsilon_{r}=4.10)$. This study presents a comprehensive library of logic gates based on these novel values, demonstrating significant stability and interference reduction improvements. Our contributions include: (1) A library of standard Boolean function gates, (2) Additional gates adapted from existing designs, and (3) A detailed comparison of gate performance using new versus old parameter values. The findings indicate that these new parameters enable more robust and compact circuit designs, advancing the potential of SiDB technology.