Investigation and Optimization of Plug Height and Bottom Recess Depth of NAND Flash Memory
Dibyadrasta Sahoo, Ankit Gaurav, Sanjeev Kumar Manhas · 2024
The top contact plug height and bottom recess depth in a 3D NAND channel hole string play a crucial role in determining the performance of multilayer 3D NAND memory. This paper investigates the effect of variation of the plug height and the bottom recess depth on various electrical parameters such as Vth, Ion, memory window, carrier density, energy band, electric field, and band-to-band generation using technology computer-aided design (TCAD). The potential drop in the channel and the high field at the substrate and channel junction are key factors in determining the memory window. Moreover, the set of optimal solutions is proposed using Pareto fronts. The results obtained in this study provide helpful insight for optimizing the 3D NAND process and device parameters.