Fast and Accurate Prediction of Electrical Characteristics of Next-Generation Node 3-D NAND Flash Memory Using Transfer Learning
Hyundong Jang, Soomin Kim, Kyeongrae Cho, Kihoon Nam, Donghyun Kim, Hyeok Yun, Seungjoon Eom, Rock‐Hyun Baek · IEEE Transactions on Electron Devices · 2025
Electrical characteristics of scaled 3-D NAND cells for next-generation node development were predicted using transfer learning with limited data. The NAND cell structure parameters were considered as the inputs, and outputs included key electrical characteristics, such as cellVt, the difference inVtbetween the initial and programming states (ΔVt), subthreshold swing (SS), and ON-current (ION). A multilayer perceptron (MLP) model comprising four hidden layers and focusing on large NAND cells (25 nm gate length) with 2000 data points served as a pre-trained model. The transfer model leveraged pre-trained knowledge to predict the electrical characteristics of smaller cells (19 nm gate length) with 500 data points without weight and bias training. Evaluation of test data exhibited remarkable accuracy with both the mean and standard deviation below 3%, proving the model’s effectiveness despite limited data. In addition, a comprehensive evaluation was conducted by comparing the performance of the model with variations in the dataset size and the presence of transfer learning, highlighting the effectiveness and advantages of transfer learning. Transfer learning could provide detailed structure information of the next node for engineers and expedite device development, resulting in significant time and cost savings.