Monolithic Integrated CMOS-MEMS Pressure Sensor with Piezoresistors Fabricated by Combinations of P-type Ion Implantation in the Standard CMOS Process
Fengyang Li, Zhiheng Yu, Changyuan Mai, Jiawei Zhou, Shiyang Yuan, Xuanqing Hua, Dacheng Zhang · 2025
This paper presents a method for fabricating piezoresistors through combinations of P-type ion implantation in the standard CMOS process, enabling the realization of monolithic integrated CMOS-MEMS pressure sensors. The method utilizes the UNT 0.18 μm 1P3M standard CMOS process combined with the AS Fab’s Post-CMOS process for fully foundry-based fabrication of the integrated sensors. The integrated sensors for four implantation combinations were evaluated, resulting in different performance characteristics, such as sensitivity and temperature coefficient. All integrated sensors demonstrated an accuracy within 0.5% FSO. This method meets the industry’s demand for large-scale production of high-precision, customizable integrated sensors.