Charge Trap Layer Supercharging for Improved Bit Reliability in 3-D NAND Flash Under Proton Irradiation
Matthew L. Breeding, Antonio E. Teijeiro, David Russell Hughart, Joshua M. Young, Dolores A. Black, Jeffrey D. Black, Edward P. Wilcox · IEEE Transactions on Nuclear Science · 2025
Single-event upset (SEU) cross sections are reduced in 176-layer charge trap (CT) 3-Dnanddevices under proton irradiation when multiple write operations are applied sequentially without the typical erase-before-write. This effect is observed for multiple data patterns and in both single-level cell (SLC) and triple-level cell (TLC) operating modes. SEU cross section calculation methodologies are discussed for highly scaled 3-D devices both with and without the application of rewrites, and potential implications for long-term endurance effects are proposed.