FDSOI Platform for Quantum Computing
Bruna Cardoso Paz, Giselle Elbaz, Mathilde Ouvrier-Buffet, M. Cassé, Flavio Enrico Bergamaschi, J.B. Filippini, J. J. Suarez Berru, Pierre-Louis Julliard, B. Martinez I Diaz, Bernhard Klemt, Victor El-Homsy, V. Champain, V. Millory, Renan Lethiecq, V. Labracherie, Grégoire Roussely, Benoît Bertrand, Heimanu Niebojewski, Franck Badets, Matias Urdampilleta · 2024
Si-based qubits are considered the most promising experimental system for scaling quantum computing. For the first time, FDSOI CMOS technology is demonstrated as the platform to co-integrate hole and electron spin qubits with cryo-electronics. For cryo-control, we show voltage gain as high as 75dB for long devices, noise of$10^{-11} \mathrm{V}^2 \cdot \mu\mathrm{m}^2 / \text{Hz}$and$1.29\text{mV}\cdot \mu\mathrm{m}$threshold voltage variability. We propose a standard cell for two-qubit gates on commercial 22FDX® and show double quantum dot features. Finally, we demonstrate hole and electron qubits on the same FDSOI technology with a manipulation time below$1\mu \mathrm{s}$and coherence time of$40\mu{\mathrm{s}}$. (Hahn echo), respectively.