Single-Photon Emission in the Telecom C-Band in a Micropillar Cavity with an InAs/InGaAs Quantum Dot
A. I. Veretennikov, Maxim V. Rakhlin, Yu. M. Serov, A. I. Galimov, G. P. Veyshtort, S. V. Sorokin, G. V. Klimko, I. V. Sedova, N. Maleev, Mikhail A. Bobrov, A. P. Vasiliev, Alexander G. Kuzmenkov, M. M. Kulagina, Yu. M. Zadiranov, S. I. Troshkov, Yu. A. Salii, D. S. Berezina, E. V. Nikitina, A. A. Toropov · Journal of Experimental and Theoretical Physics Letters · 2025
We present the design and experimental demonstration of a micropillar metamorphic cavity structure with an embedded InAs/InGaAs quantum dot, intended for single-photon generation in the telecommunication C‑band. The microcavity, incorporating a single GaAs/AlGaAs distributed Bragg reflector, is designed to provide a photon extraction efficiency of 15% into a numerical aperture of 0.7. The structure, fabricated by molecular beam epitaxy, photolithography, and plasma-enhanced chemical etching, exhibited an average C‑band photon emission rate of $$ \sim $$ 1 MHz at the first lens with a second-order correlation function of $${{g}^{{(2)}}}(0)$$ = 0.14.