A High Precision −40°C to 150°C Bandgap Reference with Dual Temperature Compensation
Yuhan Zhang, Jianzheng Li, Xiaomeng An, Lina Wang, Yajie Qin · 2024
This paper presents a novel bandgap reference circuit with a dual temperature compensation method that obtains a high precision voltage over a wide temperature range. The proposed compensation method combines a conventional calibration method with a multiband curvature compensation technique to further suppress the effects of temperature drift caused by transistors, resistors, and other devices. The proposed bandgap is implemented in a 110 nm CMOS process with a supply voltage of 1.5 V. Post layout simulation results show an optimal temperature coefficient (TC) of$4.8 \text{ppm}/^{\circ}\mathrm{C}$from$-40^{\mathrm{o}}\mathrm{C}$to$15 0^{\circ}\mathrm{C}$, with a power consumption of$14.8 \mu \mathrm{A}$.