Simulation of Program/Erase Cycling and Retention Loss in 3-D CTF NAND Flash
Anuj Kumar, Ravi Tiwari, Souvik Mahapatra · 2024
RDD model is implemented in Sentaurus TCAD and standalone modes to simulate trap generation in tunnel oxide of 3-D CTF NAND. Equivalence of trap generation kinetics is shown between P/E bipolar cycling, unipolar cycling and DC. TCAD generated few P/E bipolar cycling kinetics is extended to large number of P/E cycles (used in products) by standalone with unipolar pulses and also TCAD with equivalent-time DC. Generated trap density from RDD model is used in ABDWT model to simulate data retention loss after P/E cycling. Model results show good match with experimental data.