Back-Gate Bias Assisting VCRO Design
Chenglin Ye, Zheng Zhou, Xiaoyan Liu · 2024
A novel design method of voltage-controlled ring oscillator (VCRO) based on back-gate bias using fully depleted silicon-on-insulator (FDSOI) technology is proposed. This work compares it with traditional front-gate bias controlled oscillators in terms of frequency tuning, power consumption, phase noise as well as figure of merit (FoM). The results demonstrate the novel back-gate-controlled ring oscillator can reach 26.8× frequency tuning range compared with the frontgate controlled ring oscillator. The frequency tuning linearity and phase noise are optimized as well. Through back-gate bias, we can achieve a better frequency-power-noise tradeoffs of VCRO.