A High-Order Temperature Compensation Bandgap Voltage Reference with Line Sensitivity Enhanced
Ziyue Li, Yong Xu, Kunbo Cao, Wenqi Li, Xiaoyu Hu, Xinyue Dong · 2024
This paper proposed a bandgap voltage reference with high-order temperature compensation structure, line sensitivity enhancement structure, and zero power start-up circuit. The circuit is designed using SMIC 0.18-µm BCD process, with a working temperature range of$-40^{\circ}\mathrm{C}\sim 125^{\circ}\mathrm{C}$, a stable reference voltage of 735mV, and normal operation within the VDD range of 3.7V-4.7V. Adopting a simple line sensitivity enhancement structure to improve the accuracy of the current source mirror and the overall line sensitivity of the system. When VDD is 4.4V, the temperature coefficient of proposed bandgap voltage reference is simulated to be$1.090\text{ppm}/^{\circ}\mathrm{C}$, and the line sensitivity is 1.20%/V.