High-Performance Two-Port SRAM Design and Optimization Based on 12nm Technology
Xiangyu Kong, Yicheng Zhu, Lijun Zhang, Dongdong Xie · 2024
This article introduces a fully custom design of a high-performance, two-port$128\mathrm{x}128$-bit SRAM, utilizing a l2nm process for microprocessor applications. To achieve objectives of high speed, low power consumption, and robust read-write stability, the two-port SRAM circuit was entirely redesigned. Following the circuit design, a comprehensive custom layout was developed, and simulations were conducted to evaluate the read-write functionality, speed, and power consumption. The design operates within a voltage range of 0.6V -1.1 V and a frequency range of 1.2GHz-l.8GHz, covering an area of$5319.9\text{um}^{\wedge}2$, At a standard operating voltage of IV, the power is 8.luW/Mhz and demonstrates overall superior performance compared to previous designs.