Chip Size Reduction and Performance Enhancement in CBA-type 3D Flash Memory
Shigeki Kobayashi · 2024
We applied CBA (CMOS directly bonded to array) technology to BiCS FLASHTMgeneration 8, and demonstrated superior performance: a program throughput of 205MB/s with the triple level cell, a read time of 40μs, and an interface speed of 3.2Gbps. The CBA advantages are discussed on a viewpoint of interconnect technology. On-pitch-SGD (OPS) technology is also introduced as a newly developed technology to achieve the memory density of more than 18Gb/mm2in BiCS FLASHTMgeneration 8.