Investigation of Pocket Engineering in GNR Tunnel-FET Using Analog/RF Figures of Merit
Md Akram Ahmad, Ashish Maurya, Jitendra Kumar · IEEE Transactions on Electron Devices · 2024
This work investigates analog/RF performance characteristics of graphene nanoribbon (GNR) tunnel field-effect transistors (TFETs) featuring source-end pocket engineering. Utilizing self-consistent atomistic simulations and the nonequilibrium Green’s function (NEGF) framework, this novel research work focuses on optimizing pocket length for GNR TFETs by examining the on-current (${I} _{\text {on}}$) to off-current (${I} _{\text {off}}$) ratio${I} _{\text {on}}$/${I}_{\text {off}}$, providing insights into digital performance parameters. The optimized pocket length identified for the observed device is 5 nm. Furthermore, to enhance performance in various analog and RF applications, the impact of pocket engineering on analog/RF figures of merit (FoM) are analyzed. Transconductance (${g} _{m}$), transconductance generation factor (TGF), output conductance (${g} _{\text {ds}}$), intrinsic gain (${g} _{m}{r}_{{0}}$), gate capacitance (${C} _{\text {G}}$), cut-off frequency (${f} _{\text {T}}$), and transconductance frequency product (TFP) are examined. The results indicate that GNR TFETs with pocket engineering perform better than conventional GNR TFETs. The improvements and the lags have been discussed in detail in this report.