Circuit Design Method for Reducing Static Current Consumption and Integrated Circuit Die Self-Heating in High-Temperature Transimpedance and Operational Amplifiers Based on Field-Effect Transistors
Anna V. Bugakova, Ilya V. Frolov, Dmitriy V. Kleimenkin, Nikolay Nikolayevich Prokopenko · 2024
The circuit design method has been developed for halving the static current consumption of differential stages on field-effect transistors in transimpedance and operational amplifiers, which is recommended for use in micro-power analog microcircuits. An elementary thermal model of a high-temperature integrated circuit based on silicon-carbide (SiC), gallium-arsenide (GaAs) and silicon (Si) technologies under conditions of exposure to elevated temperatures is considered for the case when the integrated circuit die (chip) releases its self-power P0. The permissible values of the self-heating power P0have been determined for SiC, GaAs and Si technological processes that ensure the operation of the integrated circuit die at a temperature not higher than a given limit value.