Study of Efficient Design on Latchup in 130nm BCD Technology for High Voltage Application
Alwyn Rebello, Jie Jack Zeng, Kyong Jin Hwang, Jianbo Zhou, Mun Nam Chil, Ong Shiang Yang, Koo Jeoung Mo · 2024
We studied efficient design for high external latchup (ELUP) robustness in 130nm BCD technology under different Deep-Trench-Isolation (DTI) and N-EPI pickup configurations (NCOMP). We show DTI is very effective in reducing the space between I/O injector device and sensitive logic device, which is an ideal requirement for a lower footprint design with high latchup robustness. Furthermore, we demonstrate the critical role of DTI, when NCOMP around high voltage (HV) I/O FETs is biased at 0V, in latchup robustness of power management designs.