A Programmable Transimpedance Amplifier for High Capacitive Sensors
Enrico Genco, Kyle van Oosterhout, Martijn Timmermans, Atalante Koolen, Marco Fattori · IEEE Sensors Journal · 2024
In this work, we propose a new transimpedance amplifier (TIA) that can achieve high transimpedance gain without using pseudoresistors or off-chip resistors. Our approach surpasses the noise and gain tradeoff limitation, typical of conventional TIA with resistive feedback. The key idea is to use a transconductor in the TIA negative feedback loop to multiply the impedance and enable programmable high transimpedance amplification. Furthermore, to prevent stability issues while operating at high transimpedance gain and with large input capacitances, the main dominant pole of the system has been located at the input of the TIA. A system comprising the proposed TIA topology, an anti-aliasing filter (AAF), and a 12-bit analog to digital converter has been implemented in a 65-nm Si-CMOS technology to validate the performance of the proposed interface for different types of devices, e.g., indium phosphide p-i-n diodes or electrochemical random access memories. Measurement results reveal that the gain of the proposed TIA can be accurately programmed using ten different GAINTIA configurations ranging from 23 k$\Omega $to 17 M$\Omega $. With an input loading capacitance${C}_{\text {IN}} =1$nF, our TIA achieves a −3-dB bandwidth BW =2.3 kHz when operated at its maximum transimpedance gain. In these conditions, the input referred noise (IRN) current of the TIA integrated over its bandwidth is${i}_{\text {Irn}} =6.7$pArms while consuming${P}_{\text {W}} = 720~\mu $W of power. With a figure of merit FoM = GAIN$_{\text {TIA}}\cdot \text { BW}\cdot {C}_{\text {IN}}\cdot \text {(}{P}_{\text {W}}\cdot {i}_{\text {Irn}})^{-{1}}$of$8.1\times 10^{{3}}$, the proposed TIA attains the best efficiency among measured state-of-the-art implementations. The proposed TIA topology is ideal for interfacing highly capacitive sensors or to develop current interfaces for the characterization of solid-state devices.