Reservoir computing using nonlinear polarization and charge dynamics of anti-ferroelectric HZO/Si FETs
Shin-Yi Min, Kasidit Toprasertpong, Eishin Nako, Ryosho Nakane, Mitsuru Takenaka, Shinichi Takagi · 2024
We demonstrate the operation of anti-ferroelectric (AFE) Hf1−xZrxO2(HZO)/Si FETs and its potential for high-performance reservoir computing. The Zr content is adjusted to modulate the AFE properties of HZO system. The AFE behaviors with double polarization switching in FET with an AFE-HZO gate stack on a Si substrate are demonstrated. High reservoir computing capacities for time-series computational tasks are experimentally achieved thanks to rich polarization switching dynamics and polarization/charge interaction in AFE-FETs. Further enhanced reservoir computing performance is achieved by utilizing multiple current components of AFE-FETs.