An Antiferromagnetic Neuromorphic Memory Based on Perpendicularly Magnetized CoO
Xueqiang Xiang, Jiankang Xu, Zhongfang Zhang, Siyuan Jiang, Yalong Wang, Biao Wu, Wei Wang, Xiaohu Hou, Guangwei Xu, Xiaolong Zhao, Nan Gao, Shibing Long · Nano Letters · 2024
Antiferromagnets (AFMs) are ideal materials to boost neuromorphic computing toward the ultrahigh speed and ultracompact integration regime. However, developing a suitable AFM neuromorphic memory remains an aspirational but challenging goal. In this work, we construct such a memory based on the CoO/Pt heterostructure, in which the collinear insulating AFM CoO shows a strong perpendicular anisotropy facilitating its electrical readout and writing. Utilizing the unique nonlinear response and bipolar fading memory properties of the device, we demonstrate a multidimensional reservoir computing beyond the traditional binary paradigm. These results are expected to pave the way toward next-generation fast and massive neuromorphic computing.