Fabrication and Characterization of Four-State Inverter Utilizing Quantum Dot Gate Field-Effect Transistors (QDGFETS)
Bilal Khan, Roman Mays, Raja Hari Gudlavalleti, Evan K. Heller, F. Jain · International Journal of High Speed Electronics and Systems · 2024
This paper presents the experimental results of nMOS quantum dot gate field-effect transistor (QDG-FET) based four-state inverter fabricated and tested with Si/SiO2 and Ge/GeO2 quantum dots. The site-specific self-assembly of SiOx-cladded Si and GeOx-cladded Ge quantum dot layers in the gate region implements both the driver and load FETs in enhancement nMOS inverters. A four-state inverter will allow the reduction of FET count in logic block in microprocessors.