A 0.16–3.7GHz Ultra-Compact Noise-Canceling Cryogenic Low-Noise Amplifier at 4 K using 16nm FinFET Technology for Qubit Readout
Runzhou Chen, Hamdi Mani, Phil Marsh, Richard Al Hadi, Pragya Rasmi Shrestha, Jason Paul Campbell, Christopher S. Chen, Hao-Yu Chien, Mau-Chung Frank Chang · 2024
The rapid evolution of quantum computing drives the demand for CMOS cryogenic electronics to support qubit scaling ( Fig. 1 ). In this regard, we present a 16 nm FinFET technology-based cryogenic low noise amplifier (LNA) crucial for enhancing qubit readout fidelity [1] . FinFETs offer fewer temperature deviations compared to planar generations due to improved gate control [ 2 – 3 ] . The choice of the 16 nm technology node maximizes modern digital capabilities and enables superior system-on-chip (SoC) integration for quantum applications. Our circuit design is based on the cryogenic FinFET device gain and noise temperature characterization at 20 K ( Fig. 2 ) with 50-Ohm ports and the given device models down to −40°C ( Fig. 3 ). Although transistor operation at low temperatures follows standard theory, deviations occur due to factors such as dopant freeze-out and subthreshold slope saturation caused by band tails [4] . This underscores the need for accurate device characterization at low temperatures during the early design stages. Initial results at 4 K suggest the FinFET LNA's potential for low noise, low power, and high gain operation.