MTJ Based NV-SRAM Macro with Enhanced Read Margin and Low Static Power in FDSOI Process
Jiongzhe Su, Hao Cai · 2024
This paper presents a magnetic tunnel junction (MTJ) based non-volatile static random access memory (nv-SRAM) macro with dual working modes, SRAM mode and magnetic random access memory (MRAM) mode. The self-body biasing scheme is proposed to improve the read margin in MRAM mode. By using 55-nm FDSOI process, simulation results show that the read margin in MRAM mode is increased to at least$\mathbf{2}\times$compared with the conventional MRAM, and the static power is decreased to about 30% of the conventional SRAM.