Analysis of Cell Current with Abnormal Channel Profile in 3D NAND Flash Memory
Jae Wook Lee, Yungjun Kim, Yoocheol Shin, S. B. Park, Daewoong Kang, Myounggon Kang · JSTS Journal of Semiconductor Technology and Science · 2024
This letter presents an in-depth investigation of the channel profile and cell current analysis of abnormal vertical 3D NAND flash memory. By utilizing 3D (technology computer-aided design) TCAD simulation, the channel profile was designed with an oxide-nitride-oxide (O/N/O) structure, providing insights into its impact on device performance. The ID-VDS curve was measured after setting the Vth target in the program state, enabling the analysis of the cell current. Additionally, the E-field of the tunneling oxide was considered to gain a comprehensive understanding of the device behavior. Based on the analysis results, the structure most vulnerable to cell current in vertical 3D NAND flash memory has been identified.