Investigations of NAND Flash Device Cycling Performance Improvement Via FG Carbon-Doped Polysilicon and Channel Corner Rounding
Lifeng Liu, Jun Wang, Xinruo Su · 2023
Program/Erase Cycling is the most important reliability index for NAND flash devices. There are many factors that can affect the cycling performance. Two major leakage models: floating gate to channel and bit line interference are investigated in this paper. Correspondingly, two process optimization schemes are proposed, including carbon-doped polysilicon floating gate and Active Area rounding corner. Cycling performance improvement has been demonstrated by ECC correction ratio reduction and break down voltage test after cycling.