Analysis of Vth Distribution Based on Physical Parameter Variation for 3-D TLC NAND Flash Memory
Sungju Kim, Hyungcheol Shin · 2023
In this paper, the abnormal threshold voltage distribution (Vth) was analyzed considering physical variation in 3-D NAND flash memory cells. The neutral Vthdistribution is extracted by technology computer-aided design (T-CAD) simulation and the erase and the program Vthdistribution is simulated through the Monte-Carlo (M.C) method.