Novel Strategies for Highly Uniform and Reliable Cell Characteristics of 8th Generation 1Tb 3D-NAND Flash Memory
Changhwan Lee, Min-Tai Yu, Sejun Park, Hoki Lee, Bio Kim, Suhwan Lim, Jae-Duk Lee, Sunghun Lee, Min-Cheol Park, Su Jin Ahn, Sung Hoi Hur · 2023
The industry leading 8th generation 1Tb 3D-NAND flash memory (8th 3D-NAND) has been developed while possessing the smallest unit cell volume among all 3D-NAND products. Despite increasing stacking layers from 176 to 236, we improved the uniformity of channel hole size by utilizing the state of the art HARC (high-aspect ratio contact) etching technology. Degradation of interference and retention characteristics due to the cell scale-down is overcome by several ingenious technologies, leading to the development of highly reliable high performance device.