SONOS Embedded Flash IP Using Trap-Depth-Controlled SiN Film Enabling Data Retention more than 10 years at 200°C
Yasuhiro Taniguchi, Shoji Yōshida, Teruhiko Egashira, ChihBin Kuo, YiYang Shie, Yuchun Wang, Chenyu Huang, Tsuyoshi Tamatsu, Keiji Okamoto, Masanobu Hishiki, Yasushi Sasaki, Fukuo Owada, Nobuhiko Ito, Yutaka Shinagawa, ChihMing Kuo, Satoshi Noda, Toshikazu MATSUI, Kosuke Okuyama · 2023
We introduce a cost-effective, reliable and energy-efficient embedded-flash memory IP for IoT, industry, and automotive. A Silicon-Oxide-Nitride-Oxide-Silicon (SONOS)type memory is embedded on 130BCD+ process platform with only three additional mask steps. Performance including qualification has been checked as expected at TSMC. By applying trapdepth-controlled SiN film to the SONOS memory, data storage more than 10 years at 200oC is achieved.