Low Power and High-performance Ternary Content Addressable Memory using Carbon Nanotube FET
Prem Kumar, K Abheeshta Kumar Jain, Aditya Ram P S, M S Sunita · 2023
A 32nm technology based Ternary Content Addressable Memory (TCAM) using Carbon Nanotube FET (CNTFET) is proposed as an alternative to its MOSFET counterpart in this work. Virtual Source CNTFET (VS-CNTFET) and Stanford CNTFET (S-CNTFET) models are used and an 8x8 TCAM array is built. Power and Delay analysis are performed. The results obtained using these models are compared against those using two MOSFET models, namely MOSFET-Low Power (MOSFET-LP) and MOSFET High-Performance (MOSFET-HP). The simulations are performed in Cadence Virtuoso 6.1.7-64b, 2018. The simulation results show that the average Power-Delay Product (PDP) of the VS-CNTFET TCAM array is 27.53% less than that of the MOSFET-LP TCAM array and 23.32% less than that of the MOSFET-HP TCAM array while the average PDP of the S-CNTFET TCAM array is 18.21% less than that of the MOSFET-LP TCAM array and 13.5% less than that of the MOSFET-HP TCAM array.