Temperature-induced Instability of Retention Characteristics in 3-D NAND Flash Memory
Ukju An, Gilsang Yoon, Donghyun Go, Jounghun Park, Donghwi Kim, Jongwoo Kim, Jeong Soo Lee · 2023
A temperature-induced instability of retention characteristics is observed in 3-D NAND flash. The effect of grain boundary (GB) is newly considered to investigate the retention characteristics at different program temperature$(T_{PGM})$and read temperature$(T_{READ})$. At high$T_{PGM}$, the decrease of threshold voltage$(V_{T})$is reduced. As the difference between$T_{PGM}$and$T_{READ}$increases, VTchange after 4 h varies linearly from negative to positive value due to the increase of the GB effect.