"Accurate Procedure to Calculate the Stress Induced by Technological Processes in the Silicon Capacitive Pressure Sensors for Biomedical Applications"
Florin Gaiseanu · Biomedical Journal of Scientific & Technical Research · 2022
to Calculate the Stress Induced by Technological Processes in the Silicon Capacitive Pressure Sensors for Biomedical Applications.Biomed J Sci & Tech Res 43(4)-2022.BJSTR.MS.ID.006926.The silicon capacitive pressure sensors are suitable devices for the biomedical applications due to the compatibility of the material with the human health and with the traditional technological processes of the microelectronic circuits and devices, allowing the integration with microprocessors of data in biomedical/telemedicine monitoring and low cost miniaturization.Therefore, for an accurate characterization of the micro-mechanical properties of the silicon membrane, in particular the membrane obtained from polysilicon layers, as active element of the silicon capacitive pressure sensors prepared by surface micromachining technology, it is obtained and discussed a new compact form of the theoretical relations of an electrical method applied to the beam test structures, integrated on the same micro-mechanical chip, and an accurate procedure allowing explicit analytical solutions and thus easy calculation of the Young' modulus and residual stress, responsible for the bending of membrane, by the comparison of the theoretical calculations with the experimental data.