A 1800μm2, 953Gbps/W AES Accelerator for IoT Applications in 40nm CMOS
Jingjing Lan, Vishnu P. Nambiar, Ming Ming Wong, Fei Li, Yuan Gao, Kevin Tshun Chuan Chai, Anh Tuan Do · 2022
A compact and energy-efficient AES accelerator for area and power-constrained IoT applications was fabricated in a 40nm CMOS process. By eliminating the need of intermediate data registers for MixColumns and ShiftRows in our proposed AES accelerator, we were able to reduce the total flip-flops to only 269 bits. Further, by reusing functional blocks and swapping the D flip-flops in data storage with scan flip-flops, our chip occupies only a tiny area of $1800 \mu \text{m}^{2}$ with an extremely low number of 657 gates. In addition, clock gating method and near-threshold voltage were used in our design. Thus, our accelerator consumes only $3.2 \mu \text{W}$ with an operation efficiency of 953 Gbps/W using a 0.48 V supply voltage. Compared with prior arts, our design has savings of 53% on area and 55% on the number of gates. When operated with a supply voltage of 0.48 V at 25°C, we can also achieve lower energy efficiency.