A Hybrid Temperature Compensation method combined with Digital and Analog Temperature Compensation Techniques for 3D-NAND Flash Memories
Dojeon Lee, Junhong Park, Philkyu Kang, Sungmin Jo, Seheon Baek, Chi-Weon Yoon, Dongku Kang · 2022 IEEE Asian Solid-State Circuits Conference (A-SSCC) · 2022
As characteristics of NAND cells change according to temperature, WL and BL voltage compensation in accordance with temperature is required to ensure stable cell characteristics in the guaranteed operating temperature range[1–2]. As the number of WL-stack layers increases for each generation, the cell process scales down, and the number of bits stored in a single cell increases, the voltage compensation according to temperature is required to be more sophisticated and accurate. The NAND Flash market has recently expanded from mobile, PC, and data center to Automotive, which requires a wider temperature range compared to other markets. In addition, the time to sense the temperature should not be seen as the time overhead of the cell operation. Also especially in the COP structure, the peripheral area decreases as the generation increases, so it should be implemented with the minimum area.