Reference Voltage Source Optimization
Леонид Николаевич Павлов, Д. Ю. Лебедев · 2022 IEEE 41st International Conference on Electronics and Nanotechnology (ELNANO) · 2022
The article shows the possibility of reducing the temperature coefficient for the reference voltage source (RVS), built on bipolar transistors. In the first step is offered the structural scheme with compensators of decrease in temperature characteristics. The second step is to generate additional voltage to compensate for the nonlinearity of the temperature characteristic. The next step is to develop a circuit of an electrical type compensator and an example of including one and two compensators in an uncompensated circuit. It also determines the rule for the use of subsequent compensators, if necessary. The parametric optimization of the offered examples of RVS is carried out. An experimental study of the example of RVS with one link of compensation was also conducted. As a result of optimization, the value of temperature instability was reduced from 4.4 mV in the basic circuit to 1.2 mV for one compensator, and to 0.515 mV for the case of two compensators, which proves the effectiveness of the proposed strategy and models.