A low-complexity coding method for mitigating retention errors and read-disturb errors in TLC NAND flash memory
Chin-Hsien Wu, Chi-Yen Yang · 2022
When the P/E cycles of TLC NAND flash memory is exceeding its limit, data can only be safely stored in the TLC NAND flash memory for a limited retention time or a limited read cycles. As the retention time or the read cycles increases beyond a certain limit, the retention errors or the read-disturb errors could occur. In the paper, we will propose a low-complexity coding method to mitigate the retention errors and read-disturb errors in TLC NAND flash memory.