FPGA Switching Current Modeling Based on Register Transfer Level Logic Simulation for Power Side-channel Attack Prediction
Masaki Himuro, Kengo Iokibe, Yoshitaka Toyota · 2022 International Symposium on Electromagnetic Compatibility – EMC Europe · 2022
We investigated the prediction of side-channel leak-age on the power delivery network (PDN) outside a cryptographic IC. To predict the leakage, it is necessary to estimate the switching current caused by the switching activity. So far, high temporal resolution estimation based on gate-level logic simulation has been proposed, but due to the decoupling property of the PDN, the switching current leaking out of the IC chip attenuates signif-icantly. Therefore, this paper calculates the mean of the switching currents over the clock period based on register transfer level (RTL) logic simulation, and then approximates it into a triangle waveform. This approach enables us to simulate the switching current faster than with gate-level simulation. In addition, the simulation time is further shortened by calculating the switching current only to the targeted round of a cryptographic algorithm (AES). Switching currents of the previous rounds were given as statistical models with the same sample mean and variance as the targeted round. As a result of simulating the switching current of an FPGA with the proposed method, we were able to obtain the low-order harmonic components of the current in almost the same magnitude as the gate-level simulation. We also simulated correlation power analysis (CPA) results for the printed circuit board on which the FPGA with the AES circuit was mounted, and found that the proposed method could predict the dynamic power supply voltage observed on the board and CPA results with sufficient accuracy.