First Demonstration of 1-bit Erase in Vertical NAND Flash Memory
Ho-Nam Yoo, Jong-Won Back, Namhun Kim, Dongseok Kwon, Byung‐Gook Park, Jong‐Ho Lee · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022
We propose for the first time a method for erasing one selected cell in Vertical NAND (VNAND) flash memory. By controlling the voltage applied to the terminals (switch devices and cells) of the VNAND string array, 1-bit erase (GIDL generation) of one selected cell and erase inhibition (GIDL suppression) of unselected cells are successfully verified. Compared to the existing method, the 1-bit erase method reduces the current fluctuation by 17 times at an IBLof 50 nA and reduces the Vthdispersion of >2 V to ~0.2 V or less.