A 45ns fully-static 16K MOS ROM
J. Wong, P. Siu, M.S. Ebel · 1981
This report will discuss the design of a ROM that makes extensive use of small signal amplification and 0V threshold devices to reduce active power to 350mW and standby power to 75mW. The device is contact mask programmable and has a die size of 20,300 mil2.