A 44 mm/sup 2/ 4-bank 8-word page read 64 Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller
T. Tanzawa, A. Umezawa, T. Taura, Hidehiro Shiga, Takahiko Hara, Y. Takano, T. Miyaba, N. Tokiwa, K. Watanabe, H. Watanabe, K. Masuda, Kiyomi Naruke, H. Kato, S. Atsumi · 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) · 2003
Combining a negative-gate channel-erasing NOR flash memory technology with an aggressively-scaled NAND flash process technology results in a 64 Mb NOR flash memory with 0.27 /spl mu/m/sup 2/ cell and 44 mm/sup 2/ chip. The flash memory provides 4 independent banks for flexible dual operation and unique block redundancy for yield.