Design techniques to combat process, temperature and supply variations in Bluetooth RFIC
Y.T. Tee, Yeoh Hoe Seng, L.P. Boon, T.K. Hung, S. Tachi, K.S. Ling, T. Murakami, S.J. Hui, L.C. Tiong, T.L. Choon, W.W. Kheng, X.Q. Jun, L.C. Meng, L.S. Hwi, X. Wei, A. Toh · 2003
A fully integrated Bluetooth RF transceiver with sensitivity up to -85 dBm with /spl plusmn/2 dB process variation has been achieved. The sensitivity only varies /spl plusmn/1 dB from 2.7 to 3.3V and /spl plusmn/1.5 dB from -40 to +90/spl deg/C. This RFIC is fabricated using a 0.35/spl mu/m CMOS process and can withstand a maximum input power of +5 dBm for 0.1% BER.